Using E = k * |q| / r² = (9 × 10^9 N m²/C²) * (5 × 10^-6 C) / (0.2 m)² = 11250 N/C.

The electrostatic potential V at a distance r from a point charge Q is given by V = kQ/r, where k is Coulomb's constant.

The energy band gap of a typical semiconductor like silicon is approximately 1.1 eV.

The energy difference can be calculated using the formula E = 13.6 eV (1/n1² - 1/n2²). For n1=2 and n2=3, E = 13.6 eV (1/2² - 1/3²) = 1.89 eV.

The energy difference can be calculated using the formula E = 13.6 eV (1/n1² - 1/n2²). For n1=2 and n2=4, E = 13.6(1/2² - 1/4²) = 10.2 eV.

The energy released in nuclear fusion is primarily due to the mass defect, where the mass of the resulting nucleus is less than the sum of the masses of the individual nucleons.

The energy stored (U) is given by U = 1/2 CV². Thus, U = 1/2 * 4μF * (12V)² = 288μJ.

The energy (U) stored in a capacitor is given by the formula U = 1/2 CV^2.

In series, the equivalent resistance is the sum of the individual resistances: R_eq = R1 + R2 + R3 = 2 + 2 + 2 = 6 ohms.

In series, R_eq = R1 + R2 = 10 + 10 = 20Ω.

In series, R_eq = R1 + R2 = 12Ω + 12Ω = 24Ω.

In series, R_eq = R1 + R2 = 8Ω + 12Ω = 20Ω.

In series, R_eq = R1 + R2 = 8Ω + 4Ω = 12Ω.

Instrumental error occurs due to the limitations of the measuring instrument.

The error is the absolute difference between the measured value and the true value, which is |20.0 - 19.5| = 0.5 cm.

The error in measurement is the difference between the true value and the measured value, which is 100 - 95 = 5.

Using the mirror formula, 1/f = 1/v + 1/u; here, v = -10 cm (real image) and u = -30 cm (object distance). Thus, 1/f = 1/(-10) + 1/(-30) = -1/6, so f = 5 cm.

Using the mirror formula, 1/f = 1/v + 1/u. Here, v = -15 cm (real image) and u = -30 cm (object distance). Thus, 1/f = 1/(-15) + 1/(-30) = -1/10, so f = -10 cm.

Using the mirror formula, 1/f = 1/v + 1/u. Here, v = -15 cm (image distance is negative for concave mirror) and u = -30 cm. Therefore, 1/f = 1/(-15) + 1/(-30) = -1/10. Thus, f = 10 cm.

The average power (P) in an AC circuit is given by P = VI cos(φ), where φ is the phase difference between voltage and current.

The formula for calculating the heat energy required to change the temperature of a substance is Q = mcΔT, where m is mass, c is specific heat capacity, and ΔT is the change in temperature.

The formula for calculating heat transfer due to conduction is Q = kA(T1-T2)/d, where k is the thermal conductivity, A is the area, and d is the thickness.

The formula for calculating the heat transfer in a substance is Q = mcΔT, where Q is the heat added, m is the mass, c is the specific heat capacity, and ΔT is the change in temperature.

The impedance (Z) in an RLC series circuit is calculated using the formula Z = √(R^2 + X^2), where X is the total reactance.

The induced EMF in a coil is given by the formula E = -dΦ/dt, where Φ is the magnetic flux.

The formula for inductive reactance is X_L = 2πfL, where f is the frequency and L is the inductance.

The magnetic field (B) at the center of a circular loop is given by B = μ₀I/2r.

Frequency (f) can be calculated using the formula f = v/λ. Here, f = 340 m/s / 2 m = 170 Hz.

A diode allows current to flow in one direction only, acting as a one-way valve for electric current.

A transistor is primarily used for amplification of signals in electronic circuits.