Chemisorption typically decreases with an increase in temperature because it involves the formation of stronger chemical bonds, which are less favorable at higher thermal energies.

Chemisorption typically decreases with an increase in temperature because it involves the formation of stronger chemical bonds, which are less favorable at higher thermal energies.

According to the Nernst equation, the cell potential generally increases with temperature.

As temperature increases, more electrons gain enough energy to jump the band gap, increasing conductivity.

As temperature increases, the conductivity of semiconductors increases due to the generation of more charge carriers.

Fringe separation is directly proportional to the distance from the slits to the screen. Increasing this distance increases the fringe separation.

Removing a resistor from a series circuit decreases the total resistance since the sum of the remaining resistances is less.

Efficiency = 1 - (T_c/T_h) = 1 - (300/600) = 0.5.

Efficiency = 1 - (T2/T1) = 1 - (300/500) = 0.4 or 40%.

Efficiency (η) = 1 - (T_c/T_h) = 1 - (300/600) = 0.5 or 50%.

Efficiency (η) = 1 - (T2/T1) = 1 - (300/500) = 0.4 or 40%.

The efficiency (η) of a Carnot engine is given by η = 1 - (T2 / T1), where T1 is the higher temperature and T2 is the lower temperature.

The electric field due to an infinite plane sheet is E = σ/2ε₀ on both sides, but the total field is σ/ε₀.

The electric field (E) due to a point charge (q) at a distance (r) is given by E = k * q / r^2, where k is Coulomb's constant.

E = k * |q| / r^2 = (9 × 10^9) * (3 × 10^-6) / (0.3)^2 = 90 N/C.

Using E = k * |q| / r² = (9 × 10^9 N m²/C²) * (5 × 10^-6 C) / (0.2 m)² = 11250 N/C.

V = k * q / r = (9 × 10^9) * (5 × 10^-6) / 0.4 = 112.5 V.

The electric potential (V) at a distance r from a point charge Q is given by V = kQ/r.

Chromium (Cr) has the electron configuration [Ar] 3d5 4s1 due to stability of half-filled d-orbitals.

The electrostatic potential V at a distance r from a point charge Q is given by V = kQ/r, where k is Coulomb's constant.

The energy band gap of a typical semiconductor like silicon is approximately 1.1 eV.

The energy difference can be calculated using the formula E = 13.6 eV (1/n1² - 1/n2²). For n1=2 and n2=4, E = 13.6(1/2² - 1/4²) = 10.2 eV.

The energy released in nuclear fusion is primarily due to the mass defect, where the mass of the resulting nucleus is less than the sum of the masses of the individual nucleons.

The energy (U) stored in a capacitor is given by the formula U = 1/2 CV^2.

Since parallel lines have the same slope, the equation is y - 5 = 3(x - 2) which simplifies to y = 3x + 1.

Since the lines are parallel, they have the same slope. Using point-slope form: y - 1 = 3(x - 2) gives y = 3x - 8.

Slope = (4-0)/(2-0) = 2, so the equation is y = 2x.

Using point-slope form: y - 3 = 2(x - 2) => y = 2x - 4 + 3 => y = 2x - 1.

The slope m = (4 - 2) / (3 - 1) = 1. Using point-slope form, y - 2 = 1(x - 1) gives y = x + 1.

The slope m = (6 - 2) / (3 - 1) = 2. Using point-slope form, y - 2 = 2(x - 1) gives y = 2x.