In a parallel circuit, the total current is the sum of the currents in the branches: 2 A + 3 A = 5 A.

The total mechanical energy of an object in free fall is conserved, meaning it remains constant as potential energy converts to kinetic energy.

The real power (P) can be calculated using P = Power Factor × Apparent Power. Therefore, P = 0.6 × 100 VA = 60 W.

In series, total resistance R = R1 + R2 = 4 Ω + 6 Ω = 10 Ω.

In reverse bias, a diode exhibits a very small reverse saturation current until breakdown occurs.

The typical forward voltage drop across a silicon diode is approximately 0.7 V.

The SI unit of energy is the Joule (J).

Inductive reactance (X_L) is measured in Ohms (Ω), which is the same unit used for resistance.

The unit of magnetic moment is Ampere-meter (A·m²).

The SI unit of electric current is the Ampere (A).

The SI unit of electric current is the Ampere (A).

The SI unit of pressure is Pascal (Pa), which is equivalent to N/m².

The SI unit of pressure is Pascal (Pa), which is equivalent to N/m².

The gravitational constant (G) is 6.67 x 10^-11 N m²/kg².

Using Ohm's law, V = I * R = 2A * 10Ω = 20V.

Using Ohm's law, V = I * R = 2A * 10Ω = 20V.

Using Ohm's law, V = I * R = 4A * 3Ω = 12V.

Using the Rydberg formula, the wavelength for the transition from n=3 to n=1 can be calculated to be approximately 102.6 nm.

Using the Rydberg formula, the wavelength for the transition from n=4 to n=2 can be calculated to be approximately 486 nm.

Using the formula λ = d sin θ / m, where d = 0.1 mm, θ = 30°, and m = 1, we find λ = 0.1 mm * sin(30°) = 0.1 mm * 0.5 = 0.05 mm = 0.2 mm.

The work done by an ideal gas during an isobaric (constant pressure) expansion is given by W = PΔV.

The work done on a gas during isothermal compression is positive, as work is done on the gas to compress it.

Work Done (W) = Force * Distance = 15 N * 3 m = 45 J.

Young's modulus (E) = Stress / Strain = 200 MPa / 0.01 = 20000 MPa = 2000 MPa.

In n-type semiconductors, electrons are the predominant charge carriers.

In n-type semiconductors, the majority charge carriers are electrons.

Beta decay involves the conversion of a neutron into a proton, emitting a beta particle (electron).

Beta plus decay involves the conversion of a proton into a neutron, emitting a positron.

When the object is placed beyond 2F, the image formed by a convex lens is real, inverted, and smaller than the object.

A plane mirror always forms a virtual and erect image, which is the same size as the object.